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TPH2R408QM,LQ(M1
Power MOSFET, N Channel, 80 V, 200 A, 0.0019 ohm, SOP Advance, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTPH2R408QM,LQ(M1
Order Code4173196RL
Product RangeU-MOSX-H Series
Also Known AsTPH2R408QM, TPH2R408QM,LQ
Technical Datasheet
3,597 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$12.600 |
| 500+ | HK$10.670 |
| 1000+ | HK$9.470 |
| 5000+ | HK$9.050 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$1,260.00
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPH2R408QM,LQ(M1
Order Code4173196RL
Product RangeU-MOSX-H Series
Also Known AsTPH2R408QM, TPH2R408QM,LQ
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id200A
Drain Source On State Resistance0.0019ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation210W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeU-MOSX-H Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200A
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
8Pins
Product Range
U-MOSX-H Series
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0019ohm
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00011