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TPN4800CQH,L1Q(M
Power MOSFET, N Channel, 150 V, 29 A, 0.039 ohm, TSON, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTPN4800CQH,L1Q(M
Order Code4173237RL
Product RangeU-MOSX-H Series
Also Known AsTPN4800CQH, TPN4800CQH,L1Q
Technical Datasheet
3,855 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$4.740 |
| 500+ | HK$4.010 |
| 1000+ | HK$3.560 |
| 5000+ | HK$3.410 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$474.00
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN4800CQH,L1Q(M
Order Code4173237RL
Product RangeU-MOSX-H Series
Also Known AsTPN4800CQH, TPN4800CQH,L1Q
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id29A
Drain Source On State Resistance0.039ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.3V
Power Dissipation86W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeU-MOSX-H Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
29A
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
86W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.3V
No. of Pins
8Pins
Product Range
U-MOSX-H Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003