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TPN4R712MD,L1Q(M
Power MOSFET, P Channel, 20 V, 36 A, 0.0038 ohm, TSON, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTPN4R712MD,L1Q(M
Order Code3872564RL
Also Known AsTPN4R712MD, TPN4R712MD,L1Q
Technical Datasheet
17 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$4.020 |
| 500+ | HK$3.170 |
| 1000+ | HK$2.590 |
| 5000+ | HK$2.500 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$402.00
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN4R712MD,L1Q(M
Order Code3872564RL
Also Known AsTPN4R712MD, TPN4R712MD,L1Q
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id36A
Drain Source On State Resistance0.0038ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation42W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
36A
Transistor Case Style
TSON
Rds(on) Test Voltage
4.5V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0038ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001