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UJ3C120080K3S
Silicon Carbide MOSFET, Single, N Channel, 33 A, 1.2 kV, 0.08 ohm, TO-247
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140 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$159.470 |
| 5+ | HK$128.850 |
| 10+ | HK$106.840 |
Price for:Each
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Multiple: 1
HK$159.47
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUJ3C120080K3S
Order Code4014263
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id33A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max5V
Power Dissipation254.2W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
33A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
12V
Power Dissipation
254.2W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0062