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SI1012R-T1-E3
MOSFET, N, SC-75A
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1012R-T1-E3
Order Code1470088
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id600mA
Drain Source On State Resistance0.41ohm
Transistor Case StyleSC-75
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation150mW
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI1012R-T1-E3
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
600mA
Transistor Case Style
SC-75
Rds(on) Test Voltage
4.5V
Power Dissipation
150mW
Product Range
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.41ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001