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IRFD110PBF
Power MOSFET, N Channel, 100 V, 1 A, 0.54 ohm, DIP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFD110PBF
Order Code1653666
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1A
Drain Source On State Resistance0.54ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The IRFD110PBF is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Automatic insertion
- End stackable
- 175°C Operating temperature
- Fast switching and ease of paralleling
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
DIP
Rds(on) Test Voltage
10V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00059