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SI2315BDS-T1-GE3.
P CHANNEL MOSFET
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-GE3.
Order Code1867177
Your Part Number
Technical Datasheet
5,861 In Stock
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5861 Delivery in 4-5 Business Days(US stock)
| Quantity | Price |
|---|---|
| 1+ | HK$8.570 |
| 10+ | HK$5.360 |
| 25+ | HK$4.740 |
| 50+ | HK$4.120 |
| 100+ | HK$3.490 |
| 250+ | HK$3.100 |
| 500+ | HK$2.690 |
| 1000+ | HK$2.610 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$8.57
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-GE3.
Order Code1867177
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation750mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Transistor Case Style
SOT-23
Power Dissipation
750mW
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for SI2315BDS-T1-GE3.
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000044