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Quantity | Price |
---|---|
100+ | HK$3.060 |
500+ | HK$2.360 |
1000+ | HK$2.110 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$306.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4178DY-T1-GE3
Order Code2646381RL
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance0.017ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
MSLMSL 1 - Unlimited
SVHC0
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
0
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SI4178DY-T1-GE3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001