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SI6423DQ-T1-GE3
Power MOSFET, P Channel, 12 V, 8.2 A, 0.0085 ohm, TSSOP, Surface Mount
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3,669 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$13.510 |
| 10+ | HK$10.830 |
| 100+ | HK$8.980 |
| 500+ | HK$7.410 |
| 1000+ | HK$7.160 |
| 5000+ | HK$6.910 |
Price for:Each
Minimum: 1
Multiple: 1
HK$13.51
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6423DQ-T1-GE3
Order Code2335338
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id8.2A
Drain Source On State Resistance0.0085ohm
Transistor Case StyleTSSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage1.8V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.05W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
- P-channel 12V (D-S) TrenchFET® power MOSFET
- Used in load switch
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8.2A
Transistor Case Style
TSSOP
Rds(on) Test Voltage
1.8V
Power Dissipation
1.05W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001