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SIDR870ADP-T1-GE3
Power MOSFET, N Channel, 100 V, 95 A, 0.0066 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIDR870ADP-T1-GE3
Order Code2846628
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 5+ | HK$12.360 |
| 50+ | HK$10.770 |
| 100+ | HK$9.180 |
| 500+ | HK$7.620 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
HK$61.80
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR870ADP-T1-GE3
Order Code2846628
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id95A
Drain Source On State Resistance0.0066ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
SIDR870ADP-T1-GE3 is a N-channel (D-S) MOSFET. Application includes synchronous rectification, primary side switch, DC/DC converters, OR-ing, power supplies, motor drive control, battery and load switch.
- TrenchFET® power MOSFET
- Top side cooling feature provides additional venue for thermal transfer
- 100% Rg and UIS tested
- Drain-source breakdown voltage is 100V (min, VGS = 0V, ID = 250μA, TJ = 25°C)
- VDS temperature coefficient is 56mV/°C (typ, ID = 250μA, TJ = 25°C)
- Gate-source threshold voltage range from 1.5 to 3V (VDS = VGS, ID = 250μA)
- Zero gate voltage drain current is 1μA (min, VDS = 100V, VGS = 0V)
- Forward transconductance is 68S (typ, VDS = 10V, ID = 20A, TJ = 25°C)
- Output capacitance is 719pF (typ, VDS = 50V, VGS = 0V, f = 1MHz)
- PowerPAK SO-8DC package, operating junction and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
95A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074