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SIZ340ADT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 69.7 A, 69.7 A, 3570 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ340ADT-T1-GE3
Order Code3397316RL
Product RangeTrenchFET Gen IV Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | HK$5.640 |
| 500+ | HK$4.070 |
| 1500+ | HK$3.990 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$564.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ340ADT-T1-GE3
Order Code3397316RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id69.7A
Continuous Drain Current Id N Channel69.7A
On Resistance Rds(on)0.00357ohm
Continuous Drain Current Id P Channel69.7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel3570µohm
Drain Source On State Resistance P Channel3570µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.4V
No. of Pins8Pins
Power Dissipation Pd31W
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCTo Be Advised
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Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
69.7A
Continuous Drain Current Id P Channel
69.7A
Drain Source On State Resistance N Channel
3570µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
31W
Power Dissipation P Channel
31W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
69.7A
On Resistance Rds(on)
0.00357ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
3570µohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001