Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ998DT-T1-GE3
Order Code2802799RL
Product RangeTrenchFET Series
Technical Datasheet
11,484 In Stock
Need more?
11484 Delivery in 3-4 Business Days(UK stock)
Quantity | Price |
---|---|
100+ | HK$6.980 |
500+ | HK$5.920 |
1000+ | HK$5.150 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$698.00
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ998DT-T1-GE3
Order Code2802799RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel + Schottky
Transistor PolarityN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0022ohm
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel0.0022ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0022ohm
Gate Source Threshold Voltage Max2.2V
Transistor Case StylePowerPAIR
Power Dissipation Pd32.9W
No. of Pins8Pins
Power Dissipation N Channel32.9W
Power Dissipation P Channel32.9W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds
30V
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0022ohm
Continuous Drain Current Id P Channel
60A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0022ohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation P Channel
32.9W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
60A
Drain Source On State Resistance N Channel
0.0022ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
32.9W
Power Dissipation N Channel
32.9W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SIZ998DT-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Hong Kong
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Hong Kong
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006