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XP65SL190DI
Power MOSFET, N Channel, 650 V, 20 A, 0.19 ohm, TO-220CFM, Through Hole
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ManufacturerYAGEO XSEMI
Manufacturer Part NoXP65SL190DI
Order Code4169010
Product RangeXP65SL190D Series
Technical Datasheet
175 In Stock
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175 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | HK$33.300 |
| 10+ | HK$17.600 |
| 100+ | HK$14.550 |
| 500+ | HK$13.490 |
| 1000+ | HK$12.580 |
Price for:Each
Minimum: 1
Multiple: 1
HK$33.30
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Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP65SL190DI
Order Code4169010
Product RangeXP65SL190D Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id20A
Drain Source On State Resistance0.19ohm
Transistor Case StyleTO-220CFM
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.92W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeXP65SL190D Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-220CFM
Rds(on) Test Voltage
10V
Power Dissipation
1.92W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.19ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
XP65SL190D Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001