Print Page
BC847BS-7-F
Bipolar Transistor Array, Dual NPN, 45 V, 100 mA, 200 mW
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoBC847BS-7-F
Order Code1773587
Your Part Number
Technical Datasheet
1,519 In Stock
15,000 more incoming. You can reserve stock now
1519 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 5+ | HK$1.770 |
| 10+ | HK$1.080 |
| 100+ | HK$0.663 |
| 500+ | HK$0.487 |
| 1000+ | HK$0.227 |
| 5000+ | HK$0.219 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
HK$8.85
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBC847BS-7-F
Order Code1773587
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN45V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN100mA
Continuous Collector Current PNP-
Power Dissipation NPN200mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN200hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN100MHz
Transition Frequency PNP-
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BC847BS-7-F is a dual NPN transistor for switching and AF amplifier application.
- Ultra-small surface mount package
- Power dissipation is 200mW at TA = +25°C
- Collector-base breakdown voltage is 50V min at IC = 100µA, IB = 0, TA = +25°C
- Collector-emitter breakdown voltage is 45V min at IC = 10mA, IB = 0, TA = +25°C
- Emitter-base breakdown voltage is 6V min at IE = 100µA, IC = 0, TA = +25°C
- Gain bandwidth product is 100MHz min at VCE = 5.0V, IC = 10mA, f = 100MHz, TA = +25°C
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max NPN
45V
Continuous Collector Current NPN
100mA
Power Dissipation NPN
200mW
DC Current Gain hFE Min NPN
200hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
100MHz
Product Range
-
MSL
-
Technical Docs (3)
Alternatives for BC847BS-7-F
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008