Print Page
BC847BS-7-F
Bipolar Transistor Array, Dual, Dual NPN, 45 V, 100 mA, 200 mW
Image is for illustrative purposes only. Please refer to product description.
8,824 In Stock
6,000 more incoming. You can reserve stock now
8824 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 500+ | HK$0.387 |
| 1500+ | HK$0.380 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 1
HK$193.50
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBC847BS-7-F
Order Code1773587RL
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN45V
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max PNP-
DC Collector Current100mA
Power Dissipation Pd200mW
Continuous Collector Current NPN100mA
DC Current Gain hFE200hFE
Continuous Collector Current PNP-
Power Dissipation NPN200mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN200hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-363
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN100MHz
Transition Frequency PNP-
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
BC847BS-7-F is a dual NPN transistor for switching and AF amplifier application.
- Ultra-small surface mount package
- Power dissipation is 200mW at TA = +25°C
- Collector-base breakdown voltage is 50V min at IC = 100µA, IB = 0, TA = +25°C
- Collector-emitter breakdown voltage is 45V min at IC = 10mA, IB = 0, TA = +25°C
- Emitter-base breakdown voltage is 6V min at IE = 100µA, IC = 0, TA = +25°C
- Gain bandwidth product is 100MHz min at VCE = 5.0V, IC = 10mA, f = 100MHz, TA = +25°C
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
Applications
Aerospace, Defence, Military, Automotive, Power Management, Industrial
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage V(br)ceo
45V
DC Collector Current
100mA
Continuous Collector Current NPN
100mA
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
MSL
-
Collector Emitter Voltage Max NPN
45V
Collector Emitter Voltage Max PNP
-
Power Dissipation Pd
200mW
DC Current Gain hFE
200hFE
Power Dissipation NPN
200mW
DC Current Gain hFE Min NPN
200hFE
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Transition Frequency NPN
100MHz
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for BC847BS-7-F
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008