120A Silicon Carbide (SiC) MOSFETs & Modules

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Find a huge range of 120A Silicon Carbide (SiC) MOSFETs & Modules at e絡盟 Hong Kong. We stock a wide range of Silicon Carbide (SiC) MOSFETs & Modules, such as 30A, 31A, 40A & 60A Silicon Carbide (SiC) MOSFETs & Modules from the worlds top manufacturers including: Onsemi, Diotec Semiconductor & Rohm

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

BSM120D12P2C005	2345472 Data Sheet RoHS	ROHM Silicon Carbide Bipolar (BJT) Single Transistor N Channel 120 A 1.2 kV 2.7 V	Each	1+HK$3,207.600 5+HK$3,143.450	Half Bridge	N Channel	120A	1.2kV	-	Module	10Pins	-	2.7V	780W	150°C	-
UJ4SC075006K4S	4221971 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 5.9 mohm TO-247	Each	1+HK$517.670 5+HK$508.840 10+HK$500.000 50+HK$491.160	Single	N Channel	120A	750V	5.9mohm	TO-247	4Pins	12V	6V	714W	175°C	-
UF3SC120009K4S	4014251 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 8600 µohm TO-247	Each	1+HK$609.800	Single	N Channel	120A	1.2kV	8600µohm	TO-247	4Pins	12V	4.7V	789W	175°C	-
UF3SC065007K4S	4014249 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 650 V 6700 µohm TO-247	Each	1+HK$663.570 5+HK$636.050 10+HK$608.520 50+HK$589.050	Single	N Channel	120A	650V	6700µohm	TO-247	4Pins	12V	4.7V	789W	175°C	-
UG3SC120009K4S	4750191 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.011 ohm TO-247	Each	1+HK$538.280 5+HK$475.690 10+HK$415.330	Single	N Channel	120A	1.2kV	0.011ohm	TO-247	4Pins	12V	6V	789W	175°C	EliteSiC Series
UJ4N075005K4S	4750207 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 4800 µohm TO-247	Each	1+HK$387.610 5+HK$345.170 10+HK$302.730 50+HK$296.680 100+HK$290.630	Single	N Channel	120A	750V	4800µohm	TO-247	4Pins	2V	-3.7V	714W	175°C	EliteSiC Series
SCT4013DLLTRDC	4756134 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 120 A 750 V 0.0169 ohm TOLL	Each (Supplied on Cut Tape) Cut Tape	1+HK$273.630 5+HK$237.690 10+HK$201.740 50+HK$201.630 100+HK$201.520	Single	N Channel	120A	750V	0.0169ohm	TOLL	8Pins	18V	4.8V	405W	175°C	-
DIW120SIC022-AQ	4552614 Data Sheet RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+HK$567.300 5+HK$503.790 10+HK$440.270 50+HK$399.590	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	340W	175°C	-
DIF120SIC022	4552616 Data Sheet RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+HK$265.790 5+HK$229.030 10+HK$192.270 50+HK$188.430 100+HK$184.580	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
DIF120SIC022-AQ	4552613 Data Sheet RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+HK$567.300 5+HK$503.790 10+HK$440.270 50+HK$399.590	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
DIW120SIC022	4752370 Data Sheet RoHS	DIOTEC SEMICONDUCTOR Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+HK$238.930 5+HK$208.520 10+HK$175.930 50+HK$169.380 100+HK$166.600 More Pricing...	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	580W	175°C	-
UF3N120007K4S	4750183 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 7100 µohm TO-247	Each	1+HK$619.420 5+HK$533.830 10+HK$447.130 50+HK$436.090	Single	N Channel	120A	1.2kV	7100µohm	TO-247	4Pins	2V	-4.7V	789W	175°C	EliteSiC Series
UG4SC075006K4S	4750193 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 7500 µohm TO-247	Each	1+HK$294.340 5+HK$253.680 10+HK$212.480 50+HK$207.230 100+HK$204.930	Single	N Channel	120A	750V	7500µohm	TO-247	4Pins	12V	6V	714W	175°C	EliteSiC Series