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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.0142ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+HK$222.490 5+HK$195.670 10+HK$168.840 50+HK$164.740 100+HK$160.630 More Pricing... | Single | N Channel | 104A | 750V | 0.0142ohm | TO-247 | 4Pins | 12V | 5.5V | 357W | 175°C | EliteSiC Series | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+HK$249.290 5+HK$215.570 10+HK$181.840 50+HK$178.510 100+HK$175.170 More Pricing... | Single | N Channel | 106A | 750V | 0.0142ohm | SOIC | 8Pins | 12V | 5.5V | 556W | 175°C | EliteSiC Series | ||||||
