Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTHL070N120M3S	4143106 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 37 A 1.2 kV 0.091 ohm TO-247	Each	1+HK$70.440 10+HK$56.050	-	N Channel	37A	1.2kV	0.091ohm	TO-247	3Pins	18V	4.4V	126W	175°C	-
NTBG070N120M3S	4244650 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 37 A 1.2 kV 0.091 ohm D2PAK-7L	Each (Supplied on Cut Tape) Cut Tape	1+HK$109.750 5+HK$98.770 10+HK$92.920 50+HK$86.330 100+HK$80.480 More Pricing...	-	N Channel	37A	1.2kV	0.091ohm	D2PAK-7L	7Pins	18V	4.4V	252W	175°C	EliteSiC Series
UF4C120070B7S	4750186 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 25.7 A 1.2 kV 0.091 ohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cut Tape	1+HK$118.330 5+HK$100.500 10+HK$82.670 50+HK$75.030 100+HK$67.380 More Pricing...	Single	N Channel	25.7A	1.2kV	0.091ohm	TO-263 (D2PAK)	7Pins	12V	6V	183W	175°C	EliteSiC Series
NTH4L070N120M3S	4143101 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 37 A 1.2 kV 0.091 ohm TO-247	Each	60+HK$97.630	-	N Channel	37A	1.2kV	0.091ohm	TO-247	4Pins	18V	4.4V	252W	175°C	-
NTBG070N120M3S	4143096 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET N Channel 37 A 1.2 kV 0.091 ohm D2PAK-7L	Each	800+HK$94.870	-	N Channel	37A	1.2kV	0.091ohm	D2PAK-7L	7Pins	18V	4.4V	252W	175°C	-
IMDQ65R010M2HXUMA1	4667118 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 154 A 650 V 0.091 ohm HDSOP	Each (Supplied on Cut Tape) Cut Tape	1+HK$219.430 5+HK$188.950 10+HK$158.470 50+HK$152.140 100+HK$145.810 More Pricing...	Single	N Channel	154A	650V	0.091ohm	HDSOP	22Pins	20V	5.6V	651W	175°C	CoolSiC G2 Series