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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=11mohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Cut Tape | 1+HK$248.020 5+HK$222.240 10+HK$196.460 50+HK$194.570 100+HK$192.670 | Single | N Channel | 104A | 750V | 11mohm | D2PAK | 7Pins | 12V | 5.5V | 357W | 175°C | ||||||
Each | 1+HK$278.900 5+HK$251.010 10+HK$236.130 50+HK$219.400 100+HK$204.520 | Single | N Channel | 104A | 750V | 11mohm | TO-247 | 4Pins | 12V | 5.5V | 357W | 175°C | ||||||
