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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=2750µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+HK$16,966.910 | SixPack | Six N Channel | 400A | 1.2kV | 2750µohm | Module | 32Pins | 15V | 4.4V | 150°C | HybridPACK CoolSiC | ||||||
Each | 1+HK$17,558.300 | SixPack | Six N Channel | 400A | 1.2kV | 2750µohm | Module | 32Pins | 15V | 4.4V | 150°C | HybridPACK CoolSiC | ||||||
