Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

CAB400M12XM3	3267940 Data Sheet RoHS	WOLFSPEED Silicon Carbide MOSFET Half Bridge Dual N Channel 395 A 1.2 kV 4000 µohm Module	Each	1+HK$7,516.580	Half Bridge	Dual N Channel	395A	1.2kV	4000µohm	Module	-	15V	2.5V	-	175°C	-
FF3MR20KM1HHPSA1	4305724 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge Dual N Channel 375 A 2 kV 4000 µohm Module	Each	1+HK$4,524.720	Half Bridge	Dual N Channel	375A	2kV	4000µohm	Module	7Pins	18V	5.15V	-	175°C	62mm C Series
FF4MR12W2M1HB70BPSA1	4313263 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge N Channel 200 A 1.2 kV 4000 µohm Module	Each	1+HK$1,803.020 5+HK$1,766.960 10+HK$1,730.900	Half Bridge	N Channel	200A	1.2kV	4000µohm	Module	36Pins	18V	5.15V	20mW	150°C	EasyDUAL 2B CoolSiC Series
CAS350M12BM3	4258107 Data Sheet RoHS	WOLFSPEED Silicon Carbide MOSFET Half Bridge Dual N Channel 417 A 1.2 kV 4000 µohm Module	Each	1+HK$7,527.480	Half Bridge	Dual N Channel	417A	1.2kV	4000µohm	-	-	15V	3.6V	-	150°C	-
FF3MR20KM1HPHPSA1	4305725 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge Dual N Channel 325 A 2 kV 4000 µohm Module	Each	1+HK$4,423.680	Half Bridge	Dual N Channel	325A	2kV	4000µohm	Module	7Pins	18V	5.15V	-	175°C	62mm C Series
FF4MR12W2M1HB11BPSA1	4313262 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge N Channel 170 A 1.2 kV 4000 µohm Module	Each	1+HK$1,921.960 5+HK$1,776.290 10+HK$1,630.610	Half Bridge	N Channel	170A	1.2kV	4000µohm	Module	36Pins	18V	5.15V	20mW	175°C	EasyDUAL 2B CoolSiC Series