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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=410mohm
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MOSFET Module Configuration
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Cut Tape | 1+HK$77.570 10+HK$42.520 100+HK$39.080 500+HK$36.900 1000+HK$36.170 | Single | N Channel | 7.6A | 1.2kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+HK$112.920 5+HK$87.310 10+HK$61.700 50+HK$60.490 100+HK$59.280 More Pricing... | Single | N Channel | 7.6A | 1.7kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
