Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max

UF3SC120016K4S	4014253 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 107 A 1.2 kV 0.016 ohm TO-247	Each	1+HK$603.980 5+HK$516.230 10+HK$428.470 50+HK$428.040	Single	N Channel	107A	1.2kV	0.016ohm	TO-247	4Pins	12V	4.7V	517W	175°C
UF3SC120009K4S	4014251 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 8600 µohm TO-247	Each	1+HK$609.800	Single	N Channel	120A	1.2kV	8600µohm	TO-247	4Pins	12V	4.7V	789W	175°C
UF3SC120016K3S	4014252 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 107 A 1.2 kV 0.016 ohm TO-247	Each	1+HK$516.270 5+HK$435.750 10+HK$355.220 50+HK$353.760	Single	N Channel	107A	1.2kV	0.016ohm	TO-247	3Pins	12V	4.7V	517W	175°C
UF3SC065007K4S	4014249 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 650 V 6700 µohm TO-247	Each	1+HK$663.570 5+HK$636.050 10+HK$608.520 50+HK$589.050	Single	N Channel	120A	650V	6700µohm	TO-247	4Pins	12V	4.7V	789W	175°C
UF3C120400K3S	4014246 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 7.6 A 1.2 kV 0.41 ohm TO-247	Each	1+HK$93.280 5+HK$74.690 10+HK$56.090 50+HK$51.820 100+HK$47.540 More Pricing...	Single	N Channel	7.6A	1.2kV	0.41ohm	TO-247	3Pins	12V	4.7V	100W	175°C