Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max
BST47T1P4K01-VC	4840754 Data Sheet RoHS	ROHM Silicon Carbide MOSFET SixPack Six N Channel 47 A 750 V 0.037 ohm HSDIP	Each	1+HK$661.040 5+HK$624.610 10+HK$588.180 50+HK$556.390	SixPack	Six N Channel	47A	750V	0.037ohm	HSDIP	20Pins	18V	4.8V	227W	175°C
BST70B2P4K01-VC	4840755 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Full Bridge Four N Channel 70 A 1.2 kV 0.025 ohm HSDIP	Each	1+HK$827.210 5+HK$773.010 10+HK$718.810 50+HK$704.440	Full Bridge	Four N Channel	70A	1.2kV	0.025ohm	HSDIP	20Pins	18V	4.8V	385W	175°C
BST91T1P4K01-VC	4840753 Data Sheet RoHS	ROHM Silicon Carbide MOSFET SixPack Six N Channel 90 A 750 V 0.019 ohm HSDIP	Each	1+HK$1,290.540 5+HK$1,144.530 10+HK$998.510	SixPack	Six N Channel	90A	750V	0.019ohm	HSDIP	20Pins	18V	4.8V	385W	175°C
BST91B1P4K01-VC	4840752 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Full Bridge Four N Channel 90 A 750 V 0.019 ohm HSDIP	Each	1+HK$944.480 5+HK$865.060 10+HK$785.640 50+HK$720.590	Full Bridge	Four N Channel	90A	750V	0.019ohm	HSDIP	20Pins	18V	4.8V	385W	175°C
CCS050M12CM2	2317992 Data Sheet RoHS	WOLFSPEED Silicon Carbide MOSFET 6 Pack Half Bridge N Channel 87 A 1.2 kV 0.025 ohm Module	Each	1+HK$4,638.370	Half Bridge	N Channel	87A	1.2kV	0.025ohm	Module	20Pins	20V	2.3V	337W	150°C
NXH020U90MNF2PTG	4079793 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half-Bridge Module Dual N Channel 149 A 900 V 0.01003 ohm Module	Each	1+HK$1,486.990 5+HK$1,483.910 10+HK$1,480.830	Half-Bridge Module	Dual N Channel	149A	900V	0.01003ohm	Module	20Pins	15V	4.3V	352W	175°C