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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
=236W
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MOSFET Module Configuration
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Drain Source On State Resistance
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+HK$126.530 5+HK$110.730 10+HK$94.930 50+HK$84.100 100+HK$73.270 More Pricing... | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | ||||||
Each | 1+HK$103.220 5+HK$85.240 10+HK$67.250 50+HK$63.020 100+HK$58.790 More Pricing... | Single | N Channel | 30A | 1.2kV | 0.087ohm | HiP247 | 4Pins | 18V | 4.2V | 236W | 200°C | ||||||
