Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max
NTHL030N120M3S	4143104 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 73 A 1.2 kV 0.029 ohm TO-247	Each	1+HK$87.230 5+HK$80.060	Single	N Channel	73A	-	0.029ohm	TO-247	-	18V	4.4V	313W	175°C
NSF030120T1A0-QHP	5033216 Data Sheet RoHS	NEXPERIA Silicon Carbide MOSFET Single N Channel 68 A 1.2 kV 0.045 ohm QDPAK	Each (Supplied on Cut Tape) Cut Tape	1+HK$97.110 5+HK$82.020 10+HK$66.930 50+HK$64.810 100+HK$62.680 More Pricing...	Single	N Channel	68A	1.2kV	0.045ohm	QDPAK	22Pins	18V	2.9V	313W	175°C
NSF030120T1A0HP	4936865 Data Sheet RoHS	NEXPERIA Silicon Carbide MOSFET Single N Channel 68 A 1.2 kV 0.045 ohm QDPAK-EP	Each (Supplied on Cut Tape) Cut Tape	1+HK$87.710 5+HK$78.120 10+HK$67.900 50+HK$64.070 100+HK$61.490 More Pricing...	Single	N Channel	68A	1.2kV	0.045ohm	QDPAK-EP	22Pins	18V	2.9V	313W	175°C
SCT027W65G3-4AG	4458501 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 60 A 650 V 0.0393 ohm HiP247	Each	1+HK$118.570 5+HK$113.580 10+HK$108.580 50+HK$103.580 100+HK$98.580 More Pricing...	Single	N Channel	60A	650V	0.0393ohm	HiP247	4Pins	18V	4.2V	313W	200°C
NTH4L030N120M3S	4143099 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 73 A 1.2 kV 0.029 ohm TO-247	Each	30+HK$97.400	Single	N Channel	73A	-	0.029ohm	TO-247	-	18V	4.4V	313W	175°C