Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

NTH4L022N120M3S	3872098 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 68 A 1.2 kV 0.022 ohm TO-247	Each	1+HK$177.560 5+HK$144.440 10+HK$111.320 50+HK$109.140 100+HK$106.960 More Pricing...	Single	N Channel	68A	1.2kV	0.022ohm	TO-247	4Pins	18V	2.72V	352W	175°C	EliteSiC Series
NTHL022N120M3S	4143102 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 68 A 1.2 kV 0.022 ohm TO-247	Each	1+HK$333.940 5+HK$292.190 10+HK$242.120 50+HK$217.040 100+HK$210.030	Single	N Channel	68A	-	0.022ohm	TO-247	-	18V	4.4V	352W	175°C	-
NXH020U90MNF2PTG.	4070492 Data Sheet RoHS	ONSEMI MOSFET MODULE SIC 900V 149A	Each	20+HK$1,866.700	-	-	-	-	0.01003ohm	-	-	-	4.3V	352W	-	-
NXH020U90MNF2PTG	4079793 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half-Bridge Module Dual N Channel 149 A 900 V 0.01003 ohm Module	Each	1+HK$1,486.990 5+HK$1,483.910 10+HK$1,480.830	Half-Bridge Module	Dual N Channel	149A	900V	0.01003ohm	Module	20Pins	15V	4.3V	352W	175°C	-