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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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MOSFET Module Configuration
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Drain Source On State Resistance
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Rds(on) Test Voltage
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+HK$128.750 5+HK$109.030 10+HK$89.300 50+HK$72.440 100+HK$70.700 More Pricing... | Single | N Channel | 55A | 650V | 0.027ohm | HiP247 | 3Pins | 18V | 4.2V | 398W | 200°C | ||||||
Each | 1+HK$158.160 5+HK$151.750 10+HK$145.330 50+HK$138.910 100+HK$132.490 More Pricing... | Single | N Channel | 55A | 650V | 0.027ohm | HiP247 | 4Pins | 18V | 4.2V | 398W | 200°C | ||||||
