Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NTHL020N120SC1	3367855 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 103 A 1.2 kV 0.02 ohm TO-247	Each	1+HK$317.520 5+HK$313.810 10+HK$310.100 50+HK$306.390 100+HK$302.680	Single	N Channel	103A	1.2kV	0.02ohm	TO-247	3Pins	20V	2.7V	535W	175°C	EliteSiC Series
NTH4L028N170M1	4079791 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 81 A 1.7 kV 0.028 ohm TO-247	Each	1+HK$325.740 5+HK$283.360 10+HK$240.980 50+HK$236.170 100+HK$231.350	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	EliteSiC Series
NTH4L028N170M1.	4070487 Data Sheet RoHS	ONSEMI MOSFET N-CH 1.7KV 81A TO-247	Each	1+HK$325.740 5+HK$305.150 10+HK$284.550 50+HK$263.960 100+HK$243.360	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	TUK SGACK902S Keystone Coupler
IMBG65R010M2HXTMA1	4640386 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 158 A 650 V 9100 µohm TO-263 (D2PAK)	Each (Supplied on Cut Tape) Cut Tape	1+HK$213.110 5+HK$180.490 10+HK$147.860 50+HK$145.580 100+HK$143.290 More Pricing...	Single	N Channel	158A	650V	9100µohm	TO-263 (D2PAK)	7Pins	20V	5.6V	535W	175°C	CoolSiC Gen 2 Series
IMT65R015M2HXUMA1	4677107 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 131 A 650 V 0.0132 ohm HSOF	Each (Supplied on Cut Tape) Cut Tape	1+HK$169.480 5+HK$139.480 10+HK$109.470 50+HK$109.250 100+HK$109.030 More Pricing...	Single	N Channel	131A	650V	0.0132ohm	HSOF	8Pins	20V	5.6V	535W	175°C	CoolSiC Gen 2 Series