IPL60R125P7AUMA1

IPL60R125P7AUMA1 is a P7 series 600V CoolMOS™ P7 power transistor. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, example very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Potential applications include PFC stages, hard switching PWM stages and resonant switching stages for e.g PC silver box, adapter, LCD & PDP TV, lighting, server, telecom and UPS.

• Suitable for hard and soft switching due to an outstanding  commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness<gt/>2kV(HBM) for all products
• Fully qualified, JEDEC for industrial applications
• Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages
• Simplified thermal management due to low switching and conduction losses
• Suitable for a wide variety of applications and power ranges
• 600V maximum drain-source breakdown voltage (min, VGS=0V, ID=1mA)
• 0.104ohm typical drain-source on-state resistance (VGS=10V, ID=8.2A, Tj=25°C)
• PG-VSON-4 package, operating junction temperature range from -40 to 150°C