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GANC070-650WSHQ
Gallium Nitride (GaN) Transistor, 650 V, 23 A, 0.084 ohm, 15 nC, TO-247, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | HK$41.310 |
| 10+ | HK$32.530 |
| 100+ | HK$23.760 |
| 500+ | HK$22.400 |
| 1000+ | HK$21.040 |
Price for:Each
Minimum: 1
Multiple: 1
HK$41.31
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGANC070-650WSHQCopy
Order Code5033223
Drain Source Voltage Vds650V
Continuous Drain Current Id23A
Drain Source On State Resistance0.084ohm
Typical Gate Charge15nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.084ohm
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
AEC-Q101
Continuous Drain Current Id
23A
Typical Gate Charge
15nC
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001