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STH180N10F3-2
Power MOSFET, N Channel, 100 V, 180 A, 0.0039 ohm, H2PAK-2, Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTH180N10F3-2
Order Code2098248
Product RangeStripFET F3
Technical Datasheet
984 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$39.440 |
| 10+ | HK$31.220 |
| 100+ | HK$25.310 |
| 500+ | HK$23.750 |
| 1000+ | HK$18.420 |
Price for:Each
Minimum: 1
Multiple: 1
HK$39.44
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTH180N10F3-2
Order Code2098248
Product RangeStripFET F3
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id180A
Drain Source On State Resistance0.0039ohm
Transistor Case StyleH2PAK-2
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation315W
No. of Pins4Pins
Operating Temperature Max175°C
Product RangeStripFET F3
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
180A
Transistor Case Style
H2PAK-2
Rds(on) Test Voltage
10V
Power Dissipation
315W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
StripFET F3
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003175