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DMC2053UFDBQ-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.6 A, 4.6 A, 0.035 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC2053UFDBQ-7Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3828399RL
Cut Tape3828399
Your Part Number
349 In Stock
6,000 more incoming. You can reserve stock now
349 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | HK$10.390 | HK$51.95 |
| Total Price | HK$51.95 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | HK$10.390 |
| 10+ | HK$7.250 |
| 100+ | HK$4.130 |
| 500+ | HK$3.260 |
| 1000+ | HK$1.500 |
| 5000+ | HK$1.470 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2053UFDBQ-7Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3828399RL
Cut Tape3828399
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id4.6A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id N Channel4.6A
Continuous Drain Current Id P Channel4.6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.035ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.075ohm
Transistor Case StyleU-DFN2020
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd1.14W
Power Dissipation N Channel1.14W
Power Dissipation P Channel1.14W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
4.6A
On Resistance Rds(on)
0.024ohm
Continuous Drain Current Id P Channel
4.6A
Drain Source On State Resistance N Channel
0.035ohm
Drain Source On State Resistance P Channel
0.075ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.14W
Power Dissipation P Channel
1.14W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (04-Feb-2026)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4.6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
U-DFN2020
No. of Pins
6Pins
Power Dissipation N Channel
1.14W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001