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DMN3015LSD-13
Dual MOSFET, N Channel, 30 V, 30 V, 8.4 A, 8.4 A, 0.015 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN3015LSD-13Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3944101RL
Cut Tape3944101
Your Part Number
Available to Order
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | HK$9.320 | HK$9.32 |
| Total Price | HK$9.32 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | HK$9.320 |
| 10+ | HK$5.970 |
| 100+ | HK$3.930 |
| 500+ | HK$2.990 |
| 1000+ | HK$2.620 |
| 5000+ | HK$2.090 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN3015LSD-13Copy
Manufacturer Standard Lead Time43 weeks
Order Code
Re-Reel3944101RL
Cut Tape3944101
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id8.4A
Continuous Drain Current Id N Channel8.4A
On Resistance Rds(on)0.008ohm
Continuous Drain Current Id P Channel8.4A
Drain Source On State Resistance N Channel0.015ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd1.2W
No. of Pins8Pins
Power Dissipation N Channel1.2W
Power Dissipation P Channel1.2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
8.4A
Continuous Drain Current Id P Channel
8.4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Power Dissipation P Channel
1.2W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
8.4A
On Resistance Rds(on)
0.008ohm
Drain Source On State Resistance N Channel
0.015ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.2W
Power Dissipation N Channel
1.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001