1EDN7136UXTSA1

1EDN7136UXTSA1 is a 1EDN71x6U EiceDRIVER™ 200V high-side TDI gate driver IC for GaN SG HEMTs and MOSFETs. This single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky Gate HEMTs, as well as other GaN SG HEMTs and Si MOSFETs. This gate driver includes several key features that enable a high-performance system design with GaN SG HEMTs, including truly differential Input, four driving strength options, an active Miller clamp, and a bootstrap voltage clamp. Potential applications includes single channel synchronous rectifier, class-E resonant wireless power, half-bridge (2 x 1EDN71x6U) DC-DC converter, BLDC/PMSM motor drive, class-D audio amplifier, class-D resonant wireless power.

• Optimized for driving GaN SG HEMTs and Si MOSFETs
• High immunity to common-mode voltage transitions for robust operation during fast switching
• High common-mode input voltage range up to ±200V for high side operation
• Compatible with 3.3V or 5V input logic
• Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
• Active miller clamp with 5A sink capability to avoid induced turn-on
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• PG-TSNP-7-11 package type
• Junction temperature range from -40 to 150°C