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AUIRF7313QTR
Dual MOSFET, N Channel, 30 V, 30 V, 6.9 A, 6.9 A, 0.023 ohm
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ManufacturerINFINEON
Manufacturer Part NoAUIRF7313QTRCopy
Manufacturer Standard Lead Time100 weeks
Order Code
Re-Reel2579949RL
Cut Tape2579949
Product RangeHEXFET Series
Also Known AsSP001519208
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 100 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | HK$18.340 | HK$18.34 |
| Total Price | HK$18.34 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | HK$18.340 |
| 10+ | HK$15.140 |
| 100+ | HK$12.410 |
| 500+ | HK$10.650 |
| 1000+ | HK$9.860 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7313QTRCopy
Manufacturer Standard Lead Time100 weeks
Order Code
Re-Reel2579949RL
Cut Tape2579949
Product RangeHEXFET Series
Also Known AsSP001519208
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id6.9A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.023ohm
Continuous Drain Current Id N Channel6.9A
Continuous Drain Current Id P Channel6.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.023ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.023ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd2.4W
No. of Pins8Pins
Power Dissipation N Channel2.4W
Power Dissipation P Channel2.4W
Operating Temperature Max175°C
Product RangeHEXFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
6.9A
On Resistance Rds(on)
0.023ohm
Continuous Drain Current Id P Channel
6.9A
Drain Source On State Resistance N Channel
0.023ohm
Drain Source On State Resistance P Channel
0.023ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
2.4W
Product Range
HEXFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.9A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2.4W
Power Dissipation N Channel
2.4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001