CY62128ELL-45SXIT

CY62128ELL-45SXIT is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (active-low CE1 HIGH or active-low CE2 LOW). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE1 HIGH or active-low CE2 LOW), the outputs are disabled (active-low OE HIGH), or a write operation is in progress (active-low CE1 LOW and active-low CE2 HIGH and active-low WE LOW).

• Very high speed: 45ns
• Voltage range from 4.5V to 5.5V
• Pin compatible with CY62128B
• Maximum standby current is 4µA (industrial)
• Typical active current is 1.3mA at f=1MHz
• Easy memory expansion with active-low CE1, active-low CE2, and active-low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 32-pin 450-Mil SOIC package
• Industrial ambient temperature range from -40°C to +85°C