CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI is a high-performance CMOS static RAM organized as 4M words by 16 bits. This device features an advanced circuit design to provide ultra-low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular phones. The device also has an Automatic Power Down feature that significantly reduces power consumption by 99 percent when addresses are not toggling. The device can also be put into standby mode when deselected (active-low CE1 HIGH or active-low CE2 LOW or both active-low BHE and active-low BLE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a High-Z state when: deselected (active-low CE1 HIGH or active-low CE2 LOW), outputs are disabled (active-low OE HIGH), both byte high enable and byte low enable are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE1 LOW, active-low CE2 HIGH and active-low WE LOW).

• Very high speed: 55ns
• Wide voltage range from 2.2V to 3.6V
• Maximum standby current is 48µA
• Typical active current is 15mA at f=1MHz
• Easy memory expansion with active-low CE1, active-low CE2, and active-low OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• VCC for data retention is 1.5V
• 48-ball FBGA package
• Industrial ambient temperature range from -40°C to +85°C

Notes

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.