CY7C1021D-10VXIT

CY7C1021D-10VXIT is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW). Write to the device by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Read from the device by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The device is suitable for interfacing with processors that have TTL I/P levels.

• Pin and function compatible with CY7C1021B
• High speed, tAA=10ns
• VCC Operating supply current is 80mA max at 100MHz, VCC=Max, IOUT=0mA, f=fMAX=1/tRC
• Automatic CE power-down current-CMOS inputs is 3mA at Max VCC, CE>VCC-0.3V, VIN>VCC-0.3V/VIN<0.3V
• Data retention at 2.0V
• Automatic power-down when deselected, independent control of upper and lower bits
• CMOS for optimum speed and power
• Vcc is 5V ±10%
• 44-pin (400-Mil) moulded SOJ package
• Industrial ambient temperature range from -40°C to +85°C