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Quantity | Price |
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1+ | HK$1,104.720 |
Product Information
Product Overview
EVAL2EDBHBGANTOBO1 is a CoolGaN™ GIT HEMT half-bridge evaluation board with EiceDRIVER™ 2EDB8259Y. Board enables the testing of Infineon CoolGaN™ GIT HEMT in combination with EiceDRIVER™ 2EDB8259Y. The board allows to configure the auxiliary supply, which can be bipolar or unipolar, isolated or non-isolated, with bootstrap or without. Using an external inductor, the board can be configured for buck or boost-mode, double-pulse testing or continuous PWM operation, hard or soft-switching at power levels to several kW and frequencies up to MHz range. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. Typical applications include telecom power supply, server power supply and micro inverter solutions.
- Simple GaN half-bridge with dedicated GaN driver Ics
- Configurable auxiliary supply: unipolar vs bipolar (with regulation on positive or negative rail)
- Isolated vs non-isolated (bootstrap)
- Shunt on low-side GaN for current measurement
- Easy setup and use
- Enable testing with different configurations (buck, boost, direct and reverse double pulse)
- Evaluate high-frequency capabilities of GaN
- Evaluate waveforms with low ringing, overshoot, EMI
- Enables easy evaluation at multi-kilowatt power levels
- Shoot-through check and Eoss measurements via current shunt
Technical Specifications
Infineon
Power Management
Evaluation Board 2EDB8259Y
No SVHC (21-Jan-2025)
2EDB8259Y
MOSFET Gate Driver
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Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Slovenia
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate