IR2110STRPBF
Dual High Side, Low Side Driver, 10V-20V Supply, 2.5A Out, 94ns Delay, SOIC-16
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | HK$26.590 | HK$26.59 |
| Total Price | HK$26.59 | ||
| Quantity | Price |
|---|---|
| 1+ | HK$26.590 |
| 10+ | HK$19.880 |
| 25+ | HK$18.280 |
| 50+ | HK$17.370 |
| 100+ | HK$16.450 |
| 250+ | HK$15.600 |
| 500+ | HK$15.270 |
| 1000+ | HK$15.180 |
Product Information
Product Overview
The IR2110STRPBF is a high speed power MOSFET/IGBT Driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage
- dV/dt immune
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Industrial
Technical Specifications
2Channels
High Side and Low Side
16Pins
Surface Mount
2A
10V
-40°C
120ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Non-Inverting
2A
20V
125°C
94ns
-
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate