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Quantity | Price |
---|---|
1+ | HK$10.070 |
10+ | HK$7.530 |
100+ | HK$5.770 |
500+ | HK$3.960 |
1000+ | HK$3.880 |
5000+ | HK$3.810 |
Product Information
Product Overview
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Applications
Power Management
Technical Specifications
N Channel
17A
TO-263 (D2PAK)
10V
70W
175°C
-
No SVHC (21-Jan-2025)
100V
0.09ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for IRF530NSTRLPBF
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate