Print Page
IRF6621TR1PBF
Power MOSFET, N Channel, 30 V, 12 A, 0.0091 ohm, DirectFET SQ, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6621TR1PBF
Order Code1436918
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance0.0091ohm
Transistor Case StyleDirectFET SQ
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation2.2mW
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IRF6621TR1PBF
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
DirectFET SQ
Rds(on) Test Voltage
10V
Power Dissipation
2.2mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0091ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
5Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005