IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | HK$15.050 | HK$15.05 |
| Total Price | HK$15.05 | ||
| Quantity | Price |
|---|---|
| 1+ | HK$15.050 |
| 10+ | HK$9.390 |
| 100+ | HK$7.250 |
| 500+ | HK$5.730 |
| 1000+ | HK$4.850 |
| 5000+ | HK$4.760 |
Product Information
Product Overview
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
P Channel
55V
3.4A
0.095ohm
8Pins
2W
-
-
55V
3.4A
0.095ohm
SOIC
2W
150°C
-
No SVHC (25-Jun-2025)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate