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IRFH7545TRPBF
Power MOSFET, N Channel, 60 V, 85 A, 0.0043 ohm, PQFN, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRFH7545TRPBF
Order Code2709882
Product RangeStrongIRFET, HEXFET
Also Known AsSP001554800
Technical Datasheet
2,419 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$7.490 |
| 10+ | HK$5.040 |
| 100+ | HK$4.310 |
| 500+ | HK$4.210 |
| 1000+ | HK$4.130 |
| 5000+ | HK$4.050 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$7.49
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFH7545TRPBF
Order Code2709882
Product RangeStrongIRFET, HEXFET
Also Known AsSP001554800
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id85A
Drain Source On State Resistance0.0043ohm
Transistor Case StylePQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.7V
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET, HEXFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Single N-channel StrongIRFET™ power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Product qualification according to JEDEC standard
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
85A
Transistor Case Style
PQFN
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0043ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.7V
No. of Pins
8Pins
Product Range
StrongIRFET, HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00443