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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR3518PBFCopy
Order Code8649782
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id38A
Drain Source On State Resistance0.029ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The IRFR3518PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
38A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.029ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
