Print Page
IRFS4229TRLPBF
Power MOSFET, PDP Switch, N Channel, 250 V, 45 A, 0.048 ohm, TO-263 (D2PAK), Surface Mount
4,467 In Stock
Need more?
4467 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | HK$32.060 |
| 10+ | HK$23.020 |
| 50+ | HK$19.650 |
| 100+ | HK$16.280 |
| 250+ | HK$15.960 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$32.06
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS4229TRLPBF
Order Code2803424
Product RangeHEXFET
Also Known AsIRFS4229TRLPBF, SP001557392
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id45A
Drain Source On State Resistance0.048ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
Product Overview
HEXFET® Power MOSFET is specially designed for sustain, energy recovery and pass switch applications in plasma display panel. It features low EPULSE rating to reduce power dissipation in PDP sustain, energy recovery and pass switch applications.
- Advanced process technology
- Low QG for fast response
- High repetitive peak current capability for reliable operation
- Short fall & rise times for fast switching
- 175°C operating junction temperature for improved ruggedness
- Repetitive avalanche capability for robustness and reliability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
45A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
330W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for IRFS4229TRLPBF
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001