REFSICD2PAKBPTOBO1

REF-SIC-D2PAK-BP reference board is another drive card of the CoolSiC™ MOSFET 1200 V evaluation platform and it contains the EiceDRIVER™ 1EDC Compact 1EDC20I12MH with an integrated active Miller clamp preventing parasitic turn-on. The second drive card includes the EiceDRIVER™ 1EDC Compact 1EDC60H12AH allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative. The CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO263-7pin. To show these options, the design was split into one motherboard and two drive cards for SMD. The motherboard was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.

• IMBG120R030M1H already mounted on the daughter card (see REF_PS_SIC_DP2)
• VCC2 gate drive voltage supply from -5 V to +20V
• VCC1 supply fixed at +5V
• Gate connection via SMA-BNC connector
• Current measurement via optional coaxial shunt
• Optimized commutation loop
• External load inductor connection
• Heatsink design allows testing at various temperatures