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IXFN210N30P3
MOSFET Transistor, N Channel, 192 A, 300 V, 0.0145 ohm, 10 V, 5 V
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| Quantity | Price |
|---|---|
| 1+ | HK$369.920 |
| 5+ | HK$344.910 |
| 10+ | HK$319.890 |
| 50+ | HK$311.110 |
| 100+ | HK$310.170 |
Price for:Each
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Multiple: 1
HK$369.92
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N30P3
Order Code3930486
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id192A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.0145ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation1.5kW
Operating Temperature Max150°C
Product Range-
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic rectifier. It Is suitable for use in DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, AC motor drives, uninterruptible power supplies, high speed power switching applications.
- miniBLOC with aluminium nitride isolation
- Dynamic dv/dt rating
- Low RDS(on)
- Low drain-to-tab capacitance
- Low package inductance
- Easy to mount
- Space savings
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Rds(on) Test Voltage
10V
Power Dissipation
1.5kW
Product Range
-
Continuous Drain Current Id
192A
Drain Source On State Resistance
0.0145ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001