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IXTH1N450HV
Power MOSFET, N Channel, 4.5 kV, 1 A, 80 ohm, TO-247HV, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | HK$350.180 |
| 5+ | HK$328.900 |
| 10+ | HK$307.620 |
| 50+ | HK$286.340 |
| 100+ | HK$271.870 |
Price for:Each
Minimum: 1
Multiple: 1
HK$350.18
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTH1N450HV
Order Code3930512
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds4.5kV
Continuous Drain Current Id1A
Drain Source On State Resistance80ohm
Transistor Case StyleTO-247HV
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6V
Power Dissipation520W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuit and laser and X-Ray generation systems applications.
- High blocking voltage
- High voltage power MOSFET
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
TO-247HV
Rds(on) Test Voltage
10V
Power Dissipation
520W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
4.5kV
Drain Source On State Resistance
80ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
6V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001